| PART |
Description |
Maker |
| W641GG2JB |
1-Gbit GDDR3 Graphics SDRAM
|
Winbond
|
| K4J52324QC K4J52324QC-BJ14 K4J52324QC-BC14 K4J5232 |
512Mbit GDDR3 SDRAM
|
SAMSUNG[Samsung semiconductor]
|
| K4J55323QG K4J55323QG-BC12 K4J55323QG-BC14 K4J5532 |
256Mbit GDDR3 SDRAM
|
Samsung semiconductor
|
| HYB18T1G800AFL-5 HYB18T1G160AF HYB18T1G160AF-3 HYB |
1 Gbit DDR2 SDRAM
|
INFINEON[Infineon Technologies AG]
|
| 72SD3232RPFK 72SD3232 72SD3232RPFE 72SD3232RPFH 72 |
1 Gbit SDRAM 32-Meg X 32-Bit X 4-Banks
|
MAXWELL[Maxwell Technologies]
|
| HYB18T1G800AF-3S HYB18T1G400AFL-37 HYB18T1G400AFL- |
1 Gbit DDR2 SDRAM 1千兆位DDR2内存
POT 1.0K OHM 1/4 SQ CERM SL ST
|
Infineon Technologies A...
Infineon Technologies AG
|
| HYB18T1G160BF-2.5F HYB18T1G160BF-3S HYB18T1G400BF- |
1-Gbit Double-Data-Rate-Two SDRAM
1-Gbit Double-Data-Rate-Two SDRAM
|
http://
Qimonda AG
|
| V23832-R111-M101 V23832-R311-M101 V23832-R511-M101 |
PAROLI 2 Tx AC, 1.6 Gbit/s
Parallel Optical Links (PAROLI) - PAROLI?2 Tx AC, 1.6 Gbit/s, multistandard electrical interface
Parallel Optical Links (PAROLI) - PAROLI?2 Rx AC, 1.6 Gbit/s,
PAROLI 2 Tx AC/ 2.7 Gbit/s
PAROLI 2 Tx AC/ 1.25 Gbit/s
PAROLI 2 Tx AC/ 1.6 Gbit/s
|
Infineon Technologies AG
|
| NAND08GW3B2A NAND04GW3B2AN1E NAND08GW3B2AN1E NAND0 |
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
|
Numonyx B.V
|
| NAND08GW3B2CN1E NAND08GW3B2CN1F NAND08GW3B2CN6E NA |
4 Gbit, 8 Gbit, 2112 byte/1056 word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories
|
Numonyx B.V
|
| V23838-M305-M56 |
Transceivers by Form-factor MSA - SFP Multimode 850 nm; 2.125/ 1.062 Gbit/s FC; 1.25 Gbit/s GBE; LC Connector
|
Infineon
|
